发明名称 |
ELECTRONIC DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To simply transfer a thin silicon structure on a circuit board without constraints in structure size and without performing a special treatment of material.SOLUTION: An electronic device 10 roughly comprises: a quadrangular frame-shaped substrate 11 in which an opening 12 is formed by hollowing the central part; and a silicon structure 13 which is formed in a manner such that most part is bridged over the opening 12 of the substrate 11 and only a part of each of both ends is connected on the substrate 11, and which has a flat rectangular parallelepiped shape thinner than the substrate 11. A manufacturing method of an electronic device comprises the steps of: forming a lower electrode 14 on the silicon structure 13 via a thin oxide film; laminating a piezoelectric thin film 15 which is an example of a functional element for achieving a predetermined function and an upper electrode 16 on the lower electrode 14; further forming an electrode pad 17a and an electrode pad 17b; and separating the silicon structure 13 from the substrate 11 to be bonded/transferred to a flexible circuit board 31 to configure a new electronic device 30.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016039343(A) |
申请公布日期 |
2016.03.22 |
申请号 |
JP20140163591 |
申请日期 |
2014.08.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
KOBAYASHI TAKESHI;ITO HISAHIRO |
分类号 |
H01L41/053;B81B7/02;B81C3/00;H01L41/113;H01L41/313 |
主分类号 |
H01L41/053 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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