| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same, by which omission failures at etching are less likely to be generated, and voids are less likely to be generated when a bit contact plug or a lower element isolation region is formed at a bit contact trench, and thereby, that can improve the implantation property.SOLUTION: A semiconductor device comprises: a semiconductor substrate 110; first element isolation grooves 120 formed on the semiconductor substrate 110 at a first interval; a bit contact trench 122 that is formed on the semiconductor substrate 110 in a region between the adjacent first element isolation grooves 120, and that has the same depth as the first element isolation grooves 120; first element isolation regions 121 where insulating films are buried in the first element isolation grooves 120; a lower element isolation region 123 where an insulating film is buried at a lower part of the bit contact trench 122; and a bit contact plug 141 buried on the lower element isolation region 123 in the bit contact trench 122.SELECTED DRAWING: Figure 2 |
