Formation of dislocations in source and drain regions of FinFET devices

摘要

Embodiments of mechanisms for forming dislocations in source and drain regions of finFET devices are provided. The mechanisms involve recessing fins and removing the dielectric material in the isolation structures neighboring fins to increase epitaxial regions for dislocation formation. The mechanisms also involve performing a pre-amorphous implantation (PAI) process either before or after the epitaxial growth in the recessed source and drain regions. An anneal process after the PAI process enables consistent growth of the dislocations in the source and drain regions. The dislocations in the source and drain regions (or stressor regions) can form consistently to produce targeted strain in the source and drain regions to improve carrier mobility and device performance for NMOS devices.

主权项

1. A semiconductor device, comprising:
a substrate having a fin-type field-effect-transistor (finFET) region; a gate structure formed over two neighboring fin structures, the two neighboring fin structures being on the substrate in the finFET region, wherein the two neighboring fin structures contain a crystalline silicon-containing material, and wherein portions of the two neighboring fin structures protrude above neighboring isolation structures on the substrate; and a merged source/drain region between the two neighboring fin structures and proximate the gate structure, wherein no isolation region is below the merged source/drain region in a region extending laterally from between the two neighboring fin structures, dislocations are in the merged source/drain region.