Passivation and alignment of piezoelectronic transistor piezoresistor

摘要

A method of forming a piezoelectronic transistor (PET) device, the PET device, and a semiconductor including the PET device are described. The method includes forming a first metal layer, forming a layer of a piezoelectric (PE) element on the first metal layer, and forming a second metal layer on the PE element. The method also includes forming a well above the second metal layer, forming a piezoresistive (PR) material in the well and above the well, and forming a passivation layer and a top metal layer above the PR material at the diameter of the PR material above the well, wherein a cross sectional shape of the well, the PR material above the well, the passivation layer, and the top metal layer is a T-shaped structure. The method further includes forming a metal clamp layer as a top layer of the PET device.

主权项

1. A method of forming a piezoelectronic transistor (PET) device, the method comprising:
forming a first metal layer; forming a layer of a piezoelectric (PE) element on the first metal layer; forming a second metal layer on the PE element; forming a well above the second metal layer, sides of the well being lined with a passivation film; forming a piezoresistive (PR) material in the well and above the well, a diameter of the PR material above the well being greater than a diameter of the well; forming a passivation layer and a top metal layer above the PR material at the diameter of the PR material above the well, wherein a cross sectional shape of the well, the PR material above the well, the passivation layer, and the top metal layer is a T-shaped structure; and forming a metal clamp layer as a top layer of the PET device.