Trench-based power semiconductor devices with increased breakdown voltage characteristics

摘要

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

主权项

1. A semiconductor device comprising:
a gate runner disposed above a semiconductor region; a trench disposed in the semiconductor region and having a first portion disposed on a first side of the gate runner and a second portion disposed on a second side of the gate runner; a shield dielectric disposed in the semiconductor region and lining a sidewall of the trench; a shield electrode disposed in the semiconductor region and having a first portion disposed in the first portion of the trench, the shield electrode having a second portion disposed in the second portion of the trench; a gate dielectric disposed in the semiconductor region and lining an upper sidewall of the second portion of the trench; a gate electrode disposed in the semiconductor region and disposed in the second portion of the trench and insulated from the second portion of the shield electrode; and a shield runner made of a metal and disposed above the semiconductor region and having a portion contacting a top surface of the first portion of the shield electrode, the top surface of the first portion of the shield electrode being at or below a top surface of the semiconductor region.