Multi-level cell memory device and operating method thereof

摘要

According to an example embodiment of inventive concepts, an operating method of a non-volatile memory device includes: performing a first hard decision read operation that includes applying a first voltage if a selected word line of the non-volatile memory device; storing a result of the first hard decision read operation at a first latch of a page buffer in the non-volatile memory device; performing a second hard decision read operation that includes applying a second voltage to the selected word line, the second voltage being higher than the first voltage; and generating a first soft decision value using a result of the first hard decision read operation stored at the first latch.

主权项

1. A method of operating a non-volatile memory device, comprising:
performing a first hard decision read operation that includes applying a first read voltage to a selected word line of the non-volatile memory device; storing a result of the first hard decision read operation at a first latch of a page buffer in the non-volatile memory device; performing a second hard decision read operation that includes generating hard decision data by applying a second read voltage to the selected word line, the second read voltage being higher than the first read voltage; generating a first soft decision value using a result of the first hard decision read operation stored at the first latch without applying a first soft decision read voltage to the selected word line; storing the first soft decision value at a second latch of the page buffer; generating a second soft decision value by applying a soft decision read voltage to the selected word line, the soft decision read voltage being higher than the second read voltage; storing the second soft decision value at a third latch of the page buffer; and generating soft decision data using the page buffer by performing a logical operation on the first soft decision value and the second soft decision value.