| 发明名称 | CMOS RF switch device and method for biasing the same | ||
| 摘要 | According to certain aspects, a method includes determining whether to amplify a radio frequency (RF) signal by a first gain achievable by a first circuit or a second gain achievable by a second circuit, amplification of the first and second circuits respectively configured to be turned on or off by first and second switches, the first switch in the on state and the second switch in the off state resulting in the RF signal being amplified by the first gain, and the first switch in the off state and the second switch in the on state resulting in the RF signal being amplified by the second gain; and applying or inducing application of a first bias voltage or a second bias voltage to an isolated well of the first switch upon determination that the RF signal is to be amplified by the first gain or the second gain, respectively. | ||
| 申请公布号 | US9294073(B2) | 申请公布日期 | 2016.03.22 |
| 申请号 | US201414500636 | 申请日期 | 2014.09.29 |
| 申请人 | Skyworks Solutions, Inc. | 发明人 | Homol David K.;Wang Hua |
| 分类号 | H03F3/68;H03F3/72;H04B1/04;H03H11/30;H02M3/158;G05F1/565;H03F1/02;H03F3/217;H03G3/30 | 主分类号 | H03F3/68 |
| 代理机构 | Knobbe Martens Olson & Bear, LLP | 代理人 | Knobbe Martens Olson & Bear, LLP |
| 主权项 | 1. A method for controlling amplification radio frequency signals, the method comprising: determining whether to amplify a radio frequency (RF) signal by a first gain achievable by a first circuit or a second gain achievable by a second circuit, amplification of the first and second circuits respectively configured to be turned on or off by first and second switches, each of the first and second switches being a triple-well CMOS switch and including an isolated well about a source, a gate, and a drain of the respective switch, the first switch in the on state and the second switch in the off state resulting in the RF signal being amplified by the first gain, and the first switch in the off state and the second switch in the on state resulting in the RF signal being amplified by the second gain; applying or inducing application of a first bias voltage to the isolated well of the first switch upon determination that the RF signal is to be amplified by the first gain; and applying or inducing application of a second bias voltage different than the first bias voltage to the isolated well of the first switch upon determination that the RF signal is to be amplified by the second gain. | ||
| 地址 | Woburn MA US | ||