| 摘要 |
PROBLEM TO BE SOLVED: To prevent a stopper film form being removed in a capacitor formation process.SOLUTION: A semiconductor device manufacturing method comprises: a process of sequentially forming on a stopper film 5 on a semiconductor substrate 1, a first sacrificial film, a first support film 18A, a second sacrificial film and a second support film 18B; a process of forming a contact hole 11 which pierces the second support film 18B, the second sacrificial film, the first support film 18A, the first sacrificial film and the stopper film 5; a process of forming a lower electrode material; a process of forming a first opening 32A in the second support film 18B and forming a lower electrode 7 on an inner surface of the contact hole 11; a process of removing the second sacrificial film by first wet etching; a process of forming a second opening 32B in the first support film 18A by anisotropic dry etching by using the second support film 18B as a mask; and a process of removing the first sacrificial film by second wet etching, in which the first support film 18A includes either of a carbon film or a silicon film.SELECTED DRAWING: Figure 2 |
