Solar cell structure and method for fabricating the same

摘要

A solar cell structure with a microsphere-roughened antireflection structure comprises a P-type metal contact electrode, a P-type semiconductor layer, a P-type monocrystalline substrate, an N-type semiconductor layer, an N-type metal contact electrode, and a microsphere-roughened antireflection layer. The N-type semiconductor layer and the P-type semiconductor layer are respectively arranged on an upper surface and a lower surface of the P-type monocrystalline substrate. The P-type metal contact electrode is arranged below the P-type semiconductor layer. The N-type metal contact electrode has a specified pattern and is connected with the N-type semiconductor layer. The microsphere-roughened antireflection layer is arranged on an upper surface of the N-type semiconductor layer without covering the N-type metal contact electrode. The microsphere-roughened antireflection layer reduces the reflection of sunlight and increases the transmittance of sunlight to enhance the efficiency of solar cells.

主权项

1. A method for fabricating a solar cell structure with a microsphere-roughened antireflection structure, the solar cell structure with the microsphere-roughened antireflection structure comprising:
a P-type monocrystalline substrate; a N-type semiconductor layer and a P-type semiconductor that are respectively arranged on an upper surface and a lower surface of the P-type monocrystalline substrate; a P-type metal contact electrode arranged below the P-type semiconductor layer; a N-type metal contact electrode having a specified pattern and connected with the N-type semiconductor layer; a microsphere-roughened antireflection layer arranged on an upper surface of the N-type semiconductor layer without covering the N-type metal contact electrode; and a surface passivation layer arranged on the upper surface of the N-type semiconductor layer, wherein the N-type metal contact electrode passes through the surface passivation layer to connect with the N-type semiconductor layer, wherein the surface passivation layer is fabricated on the upper surface of the N-type semiconductor layer beforehand; next, the N-type metal contact electrode having the specified pattern is fabricated on an upper surface of the surface passivation layer; next, a baking process is undertaken to make the N-type metal contact electrode pass through the surface passivation layer to connect with the N-type semiconductor layer; next, the microsphere-roughened antireflection layer is fabricated on the upper surface of the surface passivation layer, without covering the N-type metal contact electrode.