Semiconductor apparatus and manufacturing method of the same

摘要

A semiconductor apparatus including a first stacked structure and a second stacked structure is provided. The first stacked structure and the second stacked structure are arranged along a first direction, and extended along a second direction perpendicular to the first direction. The first stacked structure includes a first operating portion and a first supporting portion. The first operating portion and the first supporting portion are alternately arranged along the second direction. A width of the first operating portion along the first direction is smaller than a width of the first supporting portion along the first direction.

主权项

1. A semiconductor apparatus comprising a first stacked structure and a second stacked structure arranged along a first direction and extended along a second direction perpendicular to the first direction, and a dielectric structure disposed on surfaces of the first stacked structure and the second stacked structure, the first stacked structure comprising:
a first operating portion; and a first supporting portion alternately arranged with the first operating portion along the second direction; and the second stacked structure comprising: a second operating portion disposed adjacent to the first operating portion along the first direction; and a second supporting portion alternately arranged with the second operating portion along the second direction, and disposed adjacent to the first supporting portion along the first direction; wherein a width of the first operating portion along the first direction is smaller than a width of the first supporting portion along the first direction; a width of the second operating portion along the first direction is smaller than a width of the second supporting portion along the first direction; a first trench is disposed between the first operating portion and the second operating portion, and a second trench is disposed between the first supporting portion and the second supporting portion on the longitudinal sectional view of the first stacked structure and the second stacked structure; and the dielectric structure is filled in the second trench and is a multi-layer structure comprising a tunneling layer and a trapping layer.