发明名称 Power device and preparation method thereof
摘要 A power semiconductor package and a method of preparation are disclosed. The power semiconductor package includes a pair of first and second die paddles arranged side by side, a first semiconductor chip attached to the first die paddle, a second semiconductor chip attached to the second die paddle, a metal clip electrically connecting a first electrode at the top surface of the first semiconductor chip and a first electrode at the top surface of the second semiconductor chip to a second pin, a first conductive structure connecting a second electrode at the top surface of a first semiconductor chip to a first pin, and a second conductive structure connecting a second electrode at the top surface of the second semiconductor chip to a third pin. In examples of the present disclosure, double-chip common source technique for the source electrodes of two power MOSFETs is achieved by applying a T-shape metal clip.
申请公布号 US9293397(B1) 申请公布日期 2016.03.22
申请号 US201514711969 申请日期 2015.05.14
申请人 ALPHA AND OMEGA SEMICONDUCTORS INCORPORATED 发明人 Yilmaz Hamza;Xue Yan Xun;Lu Jun
分类号 H01L23/495;H01L21/48;H01L21/56;H01L21/78 主分类号 H01L23/495
代理机构 代理人 Lin Chen-Chi
主权项 1. A method for fabricating a power device, the method comprising the steps of: providing a lead frame comprising a plurality of lead frame units, wherein each lead frame unit comprises a pair of first and second die paddles arranged side by side, a first pin, a second pin and a third pin located in proximity to the first and second die paddles; attaching a first semiconductor chip on the first die paddle and a second semiconductor chip on the second die paddle; attaching a metal clip on the first and second semiconductor chips and the second pin, so that a first electrode on a top surface of each of the first and second semiconductor chips is electrically connected to the second pin via the metal clip; connecting a second electrode on the top surface of the first semiconductor chip to the first pin via a first conductive structure; connecting a second electrode on the top surface of the second semiconductor chip to the third pin via a second conductive structure; forming a plastic package layer covering the lead frame, the first and second semiconductor chips, the metal clip and the first and second conductive structures; and cutting the plastic package layer and the lead frame to singulate the lead frame units and to form a plurality of plastic package bodies.
地址 Sunnyvale CA US