发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
The present invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a gate insulating layer formed on an inner wall of a substrate recess, a work function material layer formed on the gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, and a gate metal formed on the work function material layer. The method for manufacturing the semiconductor device includes forming a work function material layer on a gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, wherein the gate insulating layer is formed on an inner wall of a substrate recess, and depositing a gate metal on the work function material layer. |
申请公布号 |
US9293550(B2) |
申请公布日期 |
2016.03.22 |
申请号 |
US201313940095 |
申请日期 |
2013.07.11 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Fumitake Mieno |
分类号 |
H01L29/40;H01L29/423;H01L29/78;H01L21/28;H01L29/49;H01L21/8238;H01L29/66 |
主分类号 |
H01L29/40 |
代理机构 |
Innovation Counsel LLP |
代理人 |
Innovation Counsel LLP |
主权项 |
1. A semiconductor device, comprising:
a gate insulating layer selectively formed on an inner wall of a silicon substrate recess; a work function material layer directly formed on the gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor; a gate metal formed on the work function material layer; and a barrier layer formed between the work function material layer and the gate metal. |
地址 |
CN |