Field-effect semiconductor device and manufacturing therefor

摘要

A power semiconductor device includes a semiconductor body having a first surface and including an active area including n-type semiconductor regions and p-type semiconductor regions, the n-type semiconductor regions alternating, in a direction substantially parallel to the first surface, with the p-type semiconductor regions. The semiconductor body further includes a peripheral area surrounding the active area and including a low-doped semiconductor region having a first concentration of n-dopants lower than a doping concentration of n-dopants of the n-type semiconductor regions, and at least one auxiliary semiconductor region having a concentration of n-dopants higher than the first concentration and a concentration of p-dopants higher than the first concentration.

主权项

1. A field-effect semiconductor device, comprising:
a semiconductor body comprising a first surface, an edge delimiting the semiconductor body in a direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the edge; a source metallization arranged on the first surface; and a drain metallization opposite to the source metallization, in the peripheral area the semiconductor body comprising a low-doped semiconductor region having a first average concentration of dopants of a first conductivity type, in a vertical cross-section substantially orthogonal to the first surface the semiconductor body further comprising:
a plurality of pillar regions of the first conductivity type alternating with pillar regions of a second conductivity type in the active area, the pillar regions of the first conductivity type being in Ohmic contact with the drain metallization, the pillar regions of the second conductivity type being in Ohmic contact with the source metallization; andat least one auxiliary pillar region arranged in the peripheral area and comprising dopants of the first conductivity type and dopants of the second conductivity type, the at least one auxiliary pillar region having an average concentration of the dopants of the first conductivity type larger than the first average concentration.