Method for producing a semiconductor

摘要

A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.

主权项

1. A method for producing a semiconductor, comprising:
providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body, comprising:
performing a first implantation of protons into the semiconductor body via the first side to a first depth location of the semiconductor body, andperforming a first annealing of the semiconductor body after the first implantation of protons; and performing a first thinning from the second side after performing the first annealing; forming a p-doped zone in the semiconductor body after performing the first thinning so that a pn-junction forms between said n-doped zone and said p-doped zone in the semiconductor body, comprising:
performing a second implantation of protons into the semiconductor body via the second side to a second depth location of the semiconductor body, performing a second thinning of the semiconductor body after forming the p-doped zone by electrochemically etching the second side of the semiconductor body, wherein the pn-junction is an etching stop so that the electrochemically etching process ends when the pn-junction is reached.