SILICIDE REGION OF GATE-ALL-AROUND TRANSISTOR

摘要

The disclosure relates to a semiconductor device. An exemplary structure for a semiconductor device comprises: a substrate; a nanowire structure protruding from the substrate comprising a channel region between a source region and a drain region; a pair of silicide regions extending into opposite sides of the source region, wherein each of the pair of silicide regions comprises a vertical portion adjacent to the source region and a horizontal portion adjacent to the substrate; and a metal gate surrounding a portion of the channel region.