| 摘要 |
The present invention relates to a silicon wafer having gettering capability. More specifically, the purpose of the present invention is to provide a method for producing a silicon wafer, which does not create resistance variations when producing an epitaxial wafer and a bonded wafer using the silicon wafer. The method for producing the silicon wafer of the present invention comprises a step of forming a gettering layer by dissolving hydrogen ions after injection of hydrogen ions from a front side of the silicon wafer with a dose of 1.0×10^13-3.0×10^16 atoms/cm^2. |
