| 摘要 |
The present invention provides a thin film transistor, which reduces contact resistance of a source electrode or a drain electrode, and a manufacturing method for the same, wherein the transistor uses an oxide semiconductor layer containing indium (In), gallium (Ga), and zinc (Zn). A buffer layer with higher carrier concentration than an IGZO semiconductor layer is formed on purpose between a source electrode layer, a drain electrode layer, and the IGZO semiconductor layer. Therefore, ohmic contact is formed. |
