| 摘要 |
PROBLEM TO BE SOLVED: To increase the controllability of an etching rate of a substrate to be processed along a radial direction.SOLUTION: A plasma processing device comprises: a process chamber; a support member provided in the process chamber for supporting a substrate to be processed; and a gas supply member. In the gas supply member, a first region having a gas-supply hole formed therein for introducing a process gas for plasma processing of the substrate to be processed into the process chamber, a second region where the gas-supply hole is not formed, and a third region where the gas-supply hole is formed are disposed in turn along the radial direction of the substrate to be processed from the center of the substrate to be processed.SELECTED DRAWING: Figure 1 |
