| 摘要 |
A CMOS (complementary metal oxide semiconductor) inverter includes a PMOS (p-channel metal oxide semiconductor) transistor configured to receive a first input signal via a first input terminal and output a first output signal via a first output terminal, an NMOS (n-channel metal oxide semiconductor) transistor configured to receive a second input signal via a second input terminal and output a second output signal via a second output terminal, and a resistor configured to provide an isolation between the first output signal and the second output signal. In an embodiment, the first input signal is of a fast high-to-low transition but a slow low-to-high transition, and the second input signal is of a fast low-to-high transition but a slow high-to-low transition. A comparative method is also provided. |
