| 发明名称 |
Semiconductor Device |
| 摘要 |
A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer. |
| 申请公布号 |
US2016079247(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514716371 |
申请日期 |
2015.05.19 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Lim Han-Jin;Kim Youn-Soo;Park Hyun;Lee Soon-Gun;Cho Eun-Ae;Cho Chin-Moo;Kim Sung-Jin;Nam Seok-Woo |
| 分类号 |
H01L27/108;H01L49/02 |
主分类号 |
H01L27/108 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal, wherein an electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer; and an upper metal layer on the sacrificial layer. |
| 地址 |
Suwon-si KR |
