| 发明名称 |
Semiconductor Device |
| 摘要 |
A semiconductor device according to the present invention includes: an insulating substrate; a circuit pattern having a first surface that is bonded to a first main surface of the insulating substrate and a second surface opposite to the first surface on which a semiconductor element is bonded; a back surface pattern having a first surface that is bonded to a second main surface of the insulating substrate; and a heat dissipation plate bonded to a second surface of the back surface pattern opposite to the first surface of the back surface pattern. A curvature of a corner portion of the circuit pattern is greater than a curvature of a corner portion of the back surface pattern, and the corner portion of the circuit pattern is located inside the corner portion of the back surface pattern in a plan view. |
| 申请公布号 |
US2016079152(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514726006 |
申请日期 |
2015.05.29 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
OBARA Taichi |
| 分类号 |
H01L23/498;H01L29/16;H01L23/00;H01L23/367 |
主分类号 |
H01L23/498 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
an insulating substrate; a circuit pattern having a first surface that is bonded to a first main surface of said insulating substrate and a second surface opposite to said first surface on which a semiconductor element is bonded; a back surface pattern having a first surface that is bonded to a second main surface of said insulating substrate; and a heat dissipation plate bonded to a second surface of said back surface pattern opposite to said first surface of said back surface pattern, wherein a curvature of a corner portion of said circuit pattern is greater than a curvature of a corner portion of said back surface pattern, and the corner portion of said circuit pattern is located inside the corner portion of said back surface pattern in a plan view. |
| 地址 |
Tokyo JP |
