发明名称 |
OTP MEMORY CELL AND FABRICATING METHOD THEREOF |
摘要 |
A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region. |
申请公布号 |
US2016079113(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514949066 |
申请日期 |
2015.11.23 |
申请人 |
Magnachip Semiconductor, Ltd. |
发明人 |
JEON Seong-do |
分类号 |
H01L21/762;H01L27/112 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a one-time programmable (OTP) memory cell, the method comprising:
forming an isolation layer in a first conductivity type well; forming a gate insulating layer and a gate electrode on the well, wherein the gate insulating layer comprises a capacitor region, a first fuse region, and a second fuse region; and exposing an upper portion of the well on which the gate insulating layer and the gate electrode is formed to ions of a second conductivity type to form a junction region that surrounds the gate electrode. |
地址 |
Cheongju-si KR |