PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

According to one embodiment, a pattern forming method is provided. The method includes making a template touch resist material to form a first resist layer. The template has a recess/protrusion pattern. The method includes making a template touch resist material to form a second resist layer. The template has a recess/protrusion pattern. The method includes etching a processing object having the first resist layer and the second resist layer formed thereon. In forming the first resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a first length. In forming the second resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a second length. The second length is different from the first length.

主权项

1. A pattern forming method comprising:
making a template having a recess/protrusion pattern touch resist material supplied onto a first area of a processing object to form a first resist layer on the first area; making a template having a recess/protrusion pattern touch resist material supplied onto a second area of the processing object to form a second resist layer on the second area; and etching the processing object having the first resist layer and the second resist layer formed thereon, wherein in forming the first resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a first length, and in forming the second resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a second length different from the first length.