| 摘要 |
A semiconductor device having, upon an N-type semiconductor substrate comprising silicon carbide, an N-type semiconductor layer, P-type base areas (3), N-type source areas (4), a P-type contact area, a gate insulating film, a gate electrode (7), and a source electrode. The semiconductor device has a drain electrode on the rear surface of the semiconductor substrate. The source areas (4) are formed in an island shape that extend along the gate electrode (7). At least one source area (4) island is provided inside the base areas (3). The source area (4) islands may be provided side-by-side on each of three connected sides of each base area (3) island that is e.g., hexagonal. A source area (4) is not provided on an adjacent base area (3) side facing the side in each base area (3) on which a source area (4) is provided. The breakdown resistance of the semiconductor device can be increased as a result of this configuration. |
