发明名称 SEALING-LAYER-COVERED PHOTOSEMICONDUCTOR ELEMENT PRODUCTION METHOD AND PHOTOSEMICONDUCTOR DEVICE PRODUCTION METHOD
摘要 This sealing-layer-covered photosemiconductor element production method is a method for producing a sealing-layer-covered photosemiconductor element comprising a photosemiconductor element and a sealing layer covering the photosemiconductor element. This method comprises: the step of preparing a press equipped with a first mold having a cavity, and a second mold that is to be disposed so as to face the first mold; the step of disposing between the first mold and the second mold a sealing member comprising a release layer and a sealing layer in the B stage disposed on the release layer surface, in such a manner that the sealing layer faces the second mold, wherein the proportion by volume of the sealing layer with respect to the sealing layer volume capacity, obtained by subtracting the volume of the photosemiconductor element from the volume of the cavity, is between 100% and 120% inclusive; the step of disposing, between the first mold and the second mold, on the second mold side with respect to the sealing member, an element member comprising a substrate and a photosemiconductor element disposed on the substrate surface, in such a manner that the photosemiconductor element faces the first mold; and the step of bringing the first mold and the second mold close to one another to place the sealing layer in the cavity and cover the photosemiconductor element with the sealing layer.
申请公布号 WO2016039443(A1) 申请公布日期 2016.03.17
申请号 WO2015JP75838 申请日期 2015.09.11
申请人 NITTO DENKO CORPORATION 发明人 KONO, HIROKI;OOYABU, YASUNARI
分类号 H01L33/52;B29C43/18;B29C43/58;C08L83/05;C08L83/07;H01L21/56;H01L33/50 主分类号 H01L33/52
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