| 摘要 |
Method for producing a mask for the extreme ultraviolet wavelength range proceeding from a mask blank (250, 350, 550, 950) having defects (220, 320, 520, 620, 920), wherein the method comprises the following steps: a. classifying the defects (220, 320, 520, 620, 920) into at least a first group and a second group; b. optimizing arrangement of an absorber pattern (170) on the mask blank (250, 350, 550, 950) in order to compensate for a maximum number of the defects of the first group by means of the arranged absorber pattern (170); and c. applying the optimized absorber pattern (170) to the mask blank (250, 350, 550, 950). |
