发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To successfully form an alignment mark.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a second contact hole in a transistor circuit part by using a first photoresist film as a mask; forming a first alignment hole in an alignment mark part; separating the first photoresist film and subsequently filling the second contact hole; forming a positive-type photoresist film on an amorphous carbon film so as to cover the first alignment hole; performing exposure on a whole area to separate the positive-type photoresist film so as to leave the positive-type photoresist film in the second contact hole; etching the alignment mark part by using the amorphous carbon film as a mask to form a second alignment hole; subsequently removing the amorphous carbon film and the positive-type photoresist film left in the second contact hole to secure the first contact hole and the second contact hole.SELECTED DRAWING: Figure 4B
申请公布号 JP2016036001(A) 申请公布日期 2016.03.17
申请号 JP20140159174 申请日期 2014.08.05
申请人 MICRON TECHNOLOGY INC 发明人 IWATA NOBUYA
分类号 H01L21/336;H01L21/027;H01L21/8234;H01L27/088;H01L29/78 主分类号 H01L21/336
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