| 摘要 |
PROBLEM TO BE SOLVED: To provide a photomask blank and a method for manufacturing the photomask blank, in which a resist film is formed after an inorganic film containing silicon is subjected to a silylation treatment and generation of defects due to a resist residue or the like after development can be suppressed.SOLUTION: The method for manufacturing a photomask blank aims to manufacture a photomask blank having at least a silicon-containing inorganic film containing silicon on a transparent substrate and further having a resist film on the silicon-containing inorganic film. In the method, after the silicon-containing inorganic film having an oxygen concentration of 55 atomic% or more and 75 atomic% or less on a surface to be in contact with the resist film is formed, the film is subjected to a silylation treatment; and then the resist film is formed by application.SELECTED DRAWING: Figure 2 |
