SEMICONDUCTOR APPARATUS AND METHOD FOR FABRICATING THE SAME

摘要

A method for fabricating a semiconductor apparatus includes forming a variable resistor region, and forming a spacer having a top linewidth and a bottom linewidth substantially equal to each other in the variable resistor region. The forming of the spacer includes forming a first insulating layer in the variable resistor region through a first method, forming a second insulating layer along a surface of the first insulating layer in the variable resistor region through a second method for providing step coverage superior to the first method, and etching the first and second insulating layers.

主权项

1. A method for fabricating a semiconductor apparatus, the method comprising:
forming a variable resistor region; and forming a spacer having a substantially uniform width from a top to a bottom of the spacer in the variable resistor region, wherein the forming of the spacer includes: forming a first insulating layer in the variable resistor region through a first method; forming a second insulating layer over a surface of the first insulating layer in the variable resistor region through a second method, wherein the second method has step coverage superior to the first method; and etching the first and the second insulating layers.