发明名称 STAINLESS STEEL SUBSTRATE FOR SOLAR CELL HAVING SUPERIOR INSULATING PROPERTIES AND LOW THERMAL EXPANSION COEFFICIENT AND METHOD OF PRODUCING THE SAME
摘要 Provided is a stainless steel substrate for a solar cell, the stainless steel substrate including, by mass %, Cr: 9% to 25%, C: 0.03% or less, Mn: 2% or less, P: 0.05% or less, S: 0.01% or less, N: 0.03% or less, Al: 0.005% to 5.0%, Si: 0.05% to 4.0%, and a remainder including Fe and unavoidable impurities, in which an oxide film containing (i) Al2O3 in an amount of 50% or more or containing (i) Al2O3 and (ii) SiO2 in a total amount of 50% or more is formed on a surface of stainless steel having a composition which contains Al: 0.5% or more and/or Si: 0.4% or more and satisfies the following expression (1).;Cr+10Si+Mn+Al>24.5  (1)
申请公布号 US2016079455(A1) 申请公布日期 2016.03.17
申请号 US201414888860 申请日期 2014.05.02
申请人 NIPPON STEEL & SUMIKIN STAINLESS STEEL CORPORATION 发明人 HATANO Masaharu;ISHIMARU Eiichiro;HATTORI Kenji
分类号 H01L31/0392;C22C38/48;C22C38/42;C22C38/32;C22C38/30;C22C38/28;C22C38/26;C22C38/24;C22C38/22;C22C38/06;C22C38/04;C22C38/02;C22C38/00;C23C8/14;C23C8/18;C22C38/50 主分类号 H01L31/0392
代理机构 代理人
主权项 1. A stainless steel substrate for a solar cell having superior insulating properties and a low thermal expansion coefficient, the stainless steel substrate comprising: stainless steel which contains, by mass %, Cr: 9% to 25%, C: 0.03% or less, Mn: 2% or less, P: 0.05% or less, S: 0.01% or less, N: 0.03% or less, Al: 0.005% to 5.0%, Si: 0.05% to 4.0%, and a remainder including Fe and unavoidable impurities, satisfies one or both of Al content is 0.5% or more and Si content is 0.4% or more, and satisfies the following expression (1); and an oxide film formed on a surface of the stainless steel, the oxide film containing (i) Al2O3 in an amount of 50% or more or containing (i) Al2O3 and (ii) SiO2 in a total amount of 50% or more, Cr+10Si+Mn+Al>24.5  (1) where a symbol of each element in the expression (1) represents the amount (mass %) of the element in the steel.
地址 Tokyo JP