| 发明名称 |
PHOTODETECTOR WITH PLASMONIC STRUCTURE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon. |
| 申请公布号 |
US2016079452(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201414562357 |
申请日期 |
2014.12.05 |
| 申请人 |
AGENCY FOR DEFENSE DEVELOPMENT |
发明人 |
SEOK Chulkyun;YOON Euijoon;PARK Yongjo;KIM Chiyeon |
| 分类号 |
H01L31/0236;H01L31/18;H01L27/144 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photodetector with a plasmon structure, comprising:
a semiconductor substrate; a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate; and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon. |
| 地址 |
Daejeon KR |
