SEMICONDUCTOR DEVICE

摘要

According to an embodiment, a semiconductor device includes first semiconductor layers and a second semiconductor layer disposed between adjacent first semiconductor layers. The first semiconductor layers have first end surfaces, and the second semiconductor layer has a second end surface between the adjacent first semiconductor layers. The device includes a first electrode facing each first end surface of the adjacent first semiconductor layers via an insulating film, a second electrode in contact with side surfaces of the adjacent first semiconductor layers and the second end surface, a first semiconductor region between the second electrode and the adjacent first semiconductor layers, and a second semiconductor region in the first semiconductor region between the second electrode and each of the adjacent first semiconductor layers. The first semiconductor region and the second semiconductor region face the first electrode via the insulating film, and electrically connected to the second electrode.

主权项

1. A semiconductor device comprising:
an underlying layer; first semiconductor layers of a first conductivity type arranged in a first direction perpendicular to the underlying layer, the first semiconductor layers having first end surfaces; a second semiconductor layer of a second conductivity type disposed between the adjacent first semiconductor layers, the second semiconductor layer having a second end surface between the adjacent first semiconductor layers; a first electrode facing each first end surface of the adjacent first semiconductor layers via an insulating film; a second electrode in contact with each side surface of the adjacent first semiconductor layers and the second end surface; a first semiconductor region of the second conductivity type between the second electrode and each of the adjacent first semiconductor layers, the first semiconductor region facing the first electrode via the insulating film; and a second semiconductor region of the first conductivity type in the first semiconductor region between the second electrode and each of the adjacent first semiconductor layers, the second semiconductor region facing the first electrode via the insulating film, and electrically connected to the second electrode.