METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

In a method of manufacturing a semiconductor device, a preliminary gate insulation layer is formed on a substrate, and at least a portion of the substrate serves as a channel region. A hydrogen plasma treatment is performed on the preliminary gate insulation layer to form a gate insulation layer, and the hydrogen plasma treatment supplying a hydrogen-containing gas and an inert gas supply in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively. A gate electrode is formed on the gate insulation layer, and impurity regions are formed at upper portions of the substrate adjacent to the gate electrode.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a preliminary gate insulation layer on a substrate, at least a portion of the substrate serving as a channel region; performing a hydrogen plasma treatment on the preliminary gate insulation layer to form a gate insulation layer, the hydrogen plasma treatment including,
supplying a hydrogen-containing gas and an inert gas in a chamber via different gas supply parts to form a hydrogen plasma region and an inert gas plasma region in the chamber, respectively; forming a gate electrode on the gate insulation layer; and forming impurity regions at upper portions of the substrate adjacent to the gate electrode.