发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
According one embodiment, a memory device includes: a stacked body provided on a foundation layer, the stacked body including electrode layers stacked alternately with first insulating layers, at least one of the plurality of electrode layers including a first portion and a second portion, a first length between the first portion and the foundation layer being longer than a second length between the second portion and the foundation layer, difference between the first length and the second length increasing toward the foundation layer; a semiconductor member piercing the second portion, the semiconductor member extending in a direction of the stacking of the electrode layers and the first insulating layers, the semiconductor member including a region where maximum length of the semiconductor member cut perpendicularly to the direction decreases toward the foundation layer; and a memory film provided between the semiconductor member and each of the electrode layers. |
申请公布号 |
US2016079365(A1) |
申请公布日期 |
2016.03.17 |
申请号 |
US201514637654 |
申请日期 |
2015.03.04 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
NODA Kotaro |
分类号 |
H01L29/10;H01L27/115;H01L21/764;H01L29/423 |
主分类号 |
H01L29/10 |
代理机构 |
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代理人 |
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主权项 |
1. A nonvolatile semiconductor memory device, comprising:
a foundation layer; a stacked body provided on the foundation layer, the stacked body including a plurality of first electrode layers stacked alternately with a plurality of first insulating layers, at least one of the plurality of first electrode layers including a first portion and a second portion, a first length between the first portion and the foundation layer being longer than a second length between the second portion and the foundation layer, difference between the first length and the second length increasing toward the foundation layer; a first semiconductor member piercing the second portion in the stacked body, the first semiconductor member extending in a direction of the stacking of the plurality of first electrode layers and the plurality of first insulating layers, the first semiconductor member including a first region where maximum length of the first semiconductor member cut perpendicularly to the direction decreases toward the foundation layer; and a memory film provided between the first semiconductor member and each of the plurality of first electrode layers. |
地址 |
Minato-ku JP |