发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device according to one embodiment includes a semiconductor substrate, an insulating member provided in a first region on the semiconductor substrate, an insulating film provided in a second region not provided with the insulating member on the semiconductor substrate, a conductive member provided on the insulating member and on the insulating film, and a first and a second vias connected to the conductive member. An upper surface of the insulating film is lower than an upper surface of the insulating member. An upper part of the conductive member is provided in both the first region and the second region, and a lower part is provided in the second region and not provided in the first region. The conductive member has at least one portion located on the first region between the first via and the second via.
申请公布号 US2016079340(A1) 申请公布日期 2016.03.17
申请号 US201514812033 申请日期 2015.07.29
申请人 Kabushiki Kaisha Toshiba 发明人 Yamada Tomohiro;Koyama Haruhiko
分类号 H01L49/02;H01L29/06;H01L21/3205;H01L21/3105;H01L21/768;H01L23/522;H01L21/762 主分类号 H01L49/02
代理机构 代理人
主权项 1. A semiconductor device comprising: a semiconductor substrate; an insulating member provided in a first region on the semiconductor substrate; an insulating film provided in a second region not provided with the insulating member on the semiconductor substrate, an upper surface of the insulating film being lower than an upper surface of the insulating member; a conductive member provided on the insulating member and on the insulating film; and a first and a second vias connected to the conductive member, an upper part of the conductive member being provided in both the first region and the second region, and a lower part of the conductive member being provided in the second region and not provided in the first region, and the conductive member having at least one portion on the first region, the one portion being located between a first portion of the conductive member connected with the first via and a second portion of the conductive member connected with the second via.
地址 Minato-ku JP