| 发明名称 |
ESD PROTECTION CIRCUIT WITH PLURAL AVALANCHE DIODES |
| 摘要 |
An electrostatic discharge (ESD) protection circuit (FIG. 3C) is disclosed. The circuit includes a bipolar transistor (304) having a base, collector, and emitter. Each of a plurality of diodes (308-316) has a first terminal coupled to the base and a second terminal coupled to the collector. The collector is connected to a first terminal (V+). The emitter is connected to a first power supply terminal (V−). |
| 申请公布号 |
US2016079228(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514952124 |
申请日期 |
2015.11.25 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Edwards Henry L.;Salman Akram A.;Yu Lili |
| 分类号 |
H01L27/02;H01L29/10;H01L29/08;H01L21/8224;H01L29/66 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an electrostatic discharge (ESD) device, the method comprising:
forming an emitter region of a bipolar transistor near a top surface of a substrate; forming a first base region of the bipolar transistor near the top surface of the substrate, the first base region positioned adjacent to the emitter region; forming a second base region of the bipolar transistor near the top surface of the substrate, the second base region separated from the first base region; and forming a collector region of the bipolar transistor near the top surface of the substrate, the collector region positioned adjacent to the first base region to define a first avalanche diode, and the collector region interdigitating with the second base region to define a second avalanche diode. |
| 地址 |
Dallas TX US |
