SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

According to one embodiment, there is provided a semiconductor device including a first semiconductor chip and a second semiconductor chip. The second semiconductor chip is mounted on a back surface of the first semiconductor chip. The first semiconductor chip includes a substrate, a back surface wiring, a multi-layer wiring, a through silicon via, and a front surface electrode. The back surface wiring is arranged on a back surface of the substrate. The back surface wiring is electrically connected to a terminal of the second semiconductor chip. The multi-layer wiring is arranged on a front surface of the substrate. The through silicon via is configured to electrically connect the back surface wiring and the multi-layer wiring through the substrate. The front surface electrode is arranged on the multi-layer wiring and electrically connected to the multi-layer wiring.

主权项

1. A semiconductor device comprising:
a first semiconductor chip; and a second semiconductor chip mounted on a back surface of the first semiconductor chip; wherein the first semiconductor chip includes,
a substrate,a back surface wiring arranged on a back surface of the substrate, the back surface wiring being electrically connected to a terminal of the second semiconductor chip,a multi-layer wiring arranged on a front surface of the substrate,a through silicon via configured to electrically connect the back surface wiring and the multi-layer wiring through the substrate, anda front surface electrode arranged on the multi-layer wiring and electrically connected to the multi-layer wiring.