主权项 |
1. A method of forming an interconnect structure, the method comprising:
forming at least one opening into an interconnect dielectric material; forming a metal diffusion barrier liner on the interconnect dielectric material, wherein at least a portion of the metal diffusion barrier liner is inside of at least one opening, and wherein the metal diffusion barrier liner comprises a second metal; forming an adhesion layer on the metal diffusion barrier liner, wherein the adhesion barrier has a sufficiently similar lattice structure as the metal diffusion barrier liner, wherein the adhesion layer comprises a first metal, and wherein the first metal is different from the second metal; modifying the lattice structure on at least an exposed surface of the adhesion layer to a lattice structure having a different orientation; forming a conductive material on the adhesion layer, wherein the conductive material has the same lattice structure of the modified surface of the adhesion layer; and removing the conductive material, the adhesion layer and the metal diffusion barrier liner that are located outside of the at least one opening. |