MEMORY DEVICE WITH MEMORY CELLS SRAM (STATIC RANDOM ACCESS MEMORIES) AND CONTROLLING THE POLARIZATION OF BOXES OF TRANSISTORS OF THE MEMORY CELLS

摘要

A memory device includes a matrix of several columns of SRAM memory cells each including transistors forming a memory point, a read port and a write port, and such that the transistors of the read port and/or the P-type transistors include a second well with a conductivity type opposite that of a first well of the other transistors. The memory device also includes a polarization unit for the second wells, able to select and apply polarization potentials on the second wells, including a memory circuit of the polarization states of the second wells for each column or group of columns and a selection circuit applying a polarization potential on the second wells according to one of the values received as input, as a function of the stored polarization state associated with the column or group of columns.

主权项

1. A memory device comprising:
a matrix of memory cells of the SRAM type positioned next one to another while forming several columns of memory cells, each memory cell including transistors forming a memory point, a read port and a write port, and in which:
the transistors forming the memory point and the read port include a first semiconductor well doped according to a first type of conductivity and the transistors forming the read port include a second semiconductor well doped according to a second type of conductivity opposite the first type of conductivity, orthe N-type transistors among the transistors of the memory cell include the first well and the P-type transistors among the transistors of the memory cell includes the second well, orthe N-type transistors among the transistors forming the memory point and the write port include the first well, and the transistors forming the read port and the P-type transistors from among the transistors forming the memory point and the write port include the second well, polarization means for the second wells, able to select a value of at least one polarization potential of the second wells and to apply said polarization potential on the second wells, comprising:
a memory circuit able to store a polarization state of the second wells of the memory cells for each column or group of columns;a selection circuit coupled to the memory circuit, including several inputs on which different polarization potential values are intended to be applied and able to apply, on the second wells of the memory cells of each column or group of columns, one of said polarization potential values selected as a function of the polarization state stored in the memory circuit and associated with said column or said group of columns.