摘要 |
Disclosed are a thin film transistor array substrate (10) and a method for preparing the thin film transistor array substrate (10). The thin film transistor array substrate (10) comprises: multiple first metal wires (110), wherein a first gap (111) is provided between adjacent first metal wires (110); multiple second metal wires (120), wherein a second gap (121) is provided between adjacent second metal wires (120), and the second metal wires (120) and the first metal wires (110) are arranged in an intersecting manner so as to form multiple overlapped portions (113); a first insulating layer (130), which is arranged between the first metal wires (110) and the second metal wires (120) in a laminated manner and is used for enabling the first metal wires (110) to be insulated from the second metal wires (120); a second insulating layer (140), which covers the second metal wires (120) and is arranged to be laminated on the second metal wires (120); and a transparent conductive film (150), which covers the second insulating layer (140). |