| 摘要 |
This method for manufacturing a semiconductor device comprises a step for forming a film, which has a borazine ring skeleton and contains a specific element, boron and nitrogen, on a substrate by performing a cycle, which comprises a step for supplying a starting material gas containing the specific element and a halogen element to the substrate, a step for supplying a first boron-containing gas that contains a borazine ring skeleton to the substrate and a step for supplying a second boron-containing gas that does not contain a borazine ring skeleton to the substrate, several times under such conditions where the borazine ring skeleton in the first boron-containing gas is maintained. |
