PATTERN SHRINK METHOD

摘要

PROBLEM TO BE SOLVED: To provide a shrink composition and a pattern shrink method by which a fine pattern can be formed.SOLUTION: The pattern shrink method comprises: (a) providing a semiconductor substrate having one or more layers to be patterned; (b) providing a resist pattern over the one or more layers to be patterned; (c) applying a shrink composition on the pattern; and (d) rinsing a residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern. The shrink composition comprises a polymer and an organic solvent; the polymer contains a group containing a hydrogen acceptor that is effective to form a bond with an acid group and/or an alcohol group on a surface of the resist pattern; and the composition does not contain a crosslinking agent.SELECTED DRAWING: None