PROCESS FOR DENSIFYING NITRIDE FILM

摘要

In some embodiments, a nitride film is provided over a semiconductor substrate and densified. The nitride film may be a flowable nitride, which may be deposited to at least partially fill openings in the substrate. Densifying the film is accomplished without exposing the nitride film to plasma by exposing the nitride film to a non-plasma densifying agent in the process chamber. The non-plasma densifying agent may be a nitriding gas, a hydrogen scavenging gas, a silicon precursor, or a combination thereof.

主权项

1. A method for semiconductor processing, comprising:
providing a nitride film over a semiconductor substrate in a process chamber; and densifying the nitride film without exposing the nitride film to plasma by exposing the nitride film to a non-plasma densifying agent in the process chamber.