FINFET STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A FinFET structure and manufacturing method thereof, comprising: a substrate structure being an SOI substrate; a parallel first fin (210) and second fin (220) located above the substrate structure; a gate electrode stack (300) covering the substrate structure and the side wall of a part of the first fin (210) and the second fin (220); a source region (410) located in the region of the first fins (210) not covered by the gate electrode stack; a drain region (420) located in the region of the second fin (220) not covered by the gate electrode stack; a side wall (230) located at two sides of the first fin (210) and the second fin (220) and above the gate electrode stack (300) to isolate the source region, the drain region and the gate electrode stack; and a substrate structure channel region located in a region of the substrate structure adjacent to an upper surface. A new device structure is provided on the basis of an existing FinFET process, thus enabling the gate length of the device to be free of footprint size limitations, and effectively solving a problem caused by a short channel effect.