发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To increase a capacitance of a capacitor to stabilize power supply characteristics, in a semiconductor device that has such a configuration that a plurality of semiconductor chips are laminated.SOLUTION: A semiconductor device comprises: a semiconductor substrate that has a first conductivity type; a via that penetrates through the semiconductor substrate; a first conductive layer that has a second conductivity type opposite to the first conductivity type, and provided so as to be contacted with the semiconductor substrate in the via; and a second conductive layer provided so as to embed the via through a first insulating layer contacted with the first conductive layer in the via.SELECTED DRAWING: Figure 4
申请公布号 JP2016035948(A) 申请公布日期 2016.03.17
申请号 JP20140157388 申请日期 2014.08.01
申请人 MICRON TECHNOLOGY INC 发明人 UCHIYAMA SHIRO
分类号 H01L21/822;H01L21/3205;H01L21/60;H01L21/768;H01L21/8242;H01L23/522;H01L27/00;H01L27/04;H01L27/10;H01L27/108 主分类号 H01L21/822
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