| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suppressing a reduction of the gate potential of a voltage-controlled semiconductor element at a time of superimposition of high-frequency noise on a signal.SOLUTION: A semiconductor device comprises: a voltage-controlled semiconductor element 21 connected to a primary side of an ignition coil 13 supplying a discharge voltage to an ignition system of an internal combustion engine; a first resistor R1 and a second resistor R2 inserted in series into a supply passage of an input signal for controlling a gate of the voltage-controlled semiconductor element 21; a current control circuit 24 controlling a current carried to the voltage-controlled semiconductor element 21; a first bypass formation element D1 bypassing the second resistor R2 when the voltage-controlled semiconductor element 21 is turned on; and a second bypass formation element D2 bypassing the first resistor R1 and the second resistor R2 when the voltage-controlled semiconductor element 21 is turned off, the current control circuit 24 including an active element 23 connected between the first resistor R1 and the second resistor R2 and pulling down a gate voltage.SELECTED DRAWING: Figure 1 |
