| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element that includes a transistor having stable electric characteristics (e.g., an extremely reduced off current).SOLUTION: By overlaying two different element layers (an element layer including an oxide semiconductor layer, and an element layer including a photodiode) on a semiconductor substrate provided with a drive circuit such as an amplifier circuit, an occupied area of the photodiode is secured. In addition, by using a transistor that uses an oxide semiconductor layer as a channel formation region, as a transistor electrically connected with the photodiode, power consumption of a semiconductor device can be reduced.SELECTED DRAWING: Figure 1 |
