发明名称 ILLUMINATION SYSTEM FOR ILLUMINATING MASK IN MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide an illumination system for illuminating a mask in a microlithography projection exposure apparatus, in particular, a system including an array of reflection elements that can be achieved as a micro-electromechanical system (MEMS).SOLUTION: The illumination system for illuminating a mask in a microlithography projection exposure apparatus has an objective system including an objective plane, at least one pupil plane, and an image plane where a mask can be disposed. A beam deflection array comprising reflective or transmissive beam deflecting elements (M;T) is disposed, in which each beam deflecting element (M;T) is configured to respond to a control signal to deflect an incident beam at a variable deflection angle. The beam deflecting element (M;T) is disposed on the objective plane or closest to the objective plane of the objective system.SELECTED DRAWING: Figure 2
申请公布号 JP2016035606(A) 申请公布日期 2016.03.17
申请号 JP20150247053 申请日期 2015.12.18
申请人 CARL ZEISS SMT GMBH 发明人 MARKUS DEGUNTHER;MICHAEL LAI
分类号 G03F7/20 主分类号 G03F7/20
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