SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce a problem that reverse breakdown voltage of a Zener diode temporally changes in practical use and prevent a decrease in current density at the time of avalanche breakdown and deterioration in overvoltage protection function, and which can be easily and stably manufactured.SOLUTION: A semiconductor device 100 comprises: an n- type semiconductor region 120; a p type anode region 130; an annular n+ type cathode region 121 which is formed to definitely include a boundary part of the n- type semiconductor region 120 and the p type anode region 130; a p+ type anode region 131 formed on a surface of the p type anode region 130; and a p type anode region 132 which is formed in annular shape so as to include at least a part of a part inside the p type anode region 130 out of a bottom face of the n+ type cathode region 121 in plan view and so as not to include at least an inside peripheral part.SELECTED DRAWING: Figure 1