| 摘要 |
PROBLEM TO BE SOLVED: To prevent short-circuit between an upper electrode and a lower electrode even when cracks occur in a support insulating film, and to achieve a capacitor structure with a high resistance against stress.SOLUTION: After a capacitance insulating film and an upper electrode are sequentially formed on a lower electrode and a support insulating film, a protection insulating film is formed on the upper electrode. Thereafter, a part of the protection insulating film is removed by etching to expose a part of a surface of the upper electrode again. A plate electrode is laminated so as to cover the upper electrode completely.SELECTED DRAWING: Figure 15 |
